Kalna, K., Seoane, N., Aldegunde, M., Nagy, D., Elmessary, M. A., Indalecio, G., . . . Kalna, K. (2016). Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes. Semiconductor Science and Technology, 31(7), p. 075005. doi:10.1088/0268-1242/31/7/075005

Kalna, Karol, N. Seoane, M. Aldegunde, D. Nagy, M A. Elmessary, G. Indalecio, A J. García-Loureiro, and K. Kalna. "Simulation Study of Scaled In0.53Ga0.47As and Si FinFETs for Sub-16 Nm Technology Nodes." Semiconductor Science and Technology 31, no. 7 (2016): 075005.

Kalna, Karol, et al. "Simulation Study of Scaled In0.53Ga0.47As and Si FinFETs for Sub-16 Nm Technology Nodes." Semiconductor Science and Technology 31.7 (2016): 075005.