Muniz, A. M. (2009). Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study. IEEE Transactions on Electron Devices, 56(7), . doi:10.1109/ted.2009.2021357

Muniz, Antonio Martinez. "Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study." IEEE Transactions On Electron Devices 56, no. 7 (2009).

Muniz, Antonio Martinez. "Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study." IEEE Transactions On Electron Devices 56.7 (2009).